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000000541 037__ $$aROMDOC-THESIS-2010-031
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000000541 100__ $$aAmza, Claudiu$$uUPB
000000541 245__ $$aModelarea fenomenelor de transport în structuri semiconductoare utilizând metoda Monte Carlo 
000000541 260__ $$c2007-01-01
000000541 500__ $$aProfirescu, Marcel D.
000000541 520__ $$aAs semiconductor feature sizes shrink into the nanometer scale regime, device behavior becomes increasingly complicated as new physical phenomena at short dimensions occur, and limitations in material properties are reached. Actual research efforts to improve the physical basis of device simulation programs have the following approaches:  •	extensions to present models, by adding additional equations governing carrier momentum and energy.  •	solutions based upon the Boltzmann Transport Equation, incorporating descriptions of semiconductor properties such as band structure and scattering rates.  •	a total quantum-mechanical approach. From this perspective the present thesis falls in the second approach. The thesis presents: •	Modeling and simulation of the carrier transport in semiconductors •	Scattering phenomena analysis and compute the scattering rates. •	Implementation of a numerical simulator based on the Monte Carlo method which can be used on a wide range of semiconductor materials in order to determine the transport parameters.
000000541 6531_ $$aSemiconductoare Fenomene de transport -- Teză de doctorat 
000000541 6531_ $$aMetoda Monte Carlo (Statistică matematică) -- Simulare cu modele matematice -- Teză de doctorat 
000000541 6531_ $$aFizica materialelor Semiconductoare -- Teză de doctorat 
000000541 8560_ $$fmihagabi@gmail.com
000000541 8564_ $$uhttp://romdoc.upb.ro/record/541/files/$$zAccess to Fulltext
000000541 909CO $$ooai:romdoc.upb.ro:541$$pglobal
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000000541 980__ $$aTHESIS