Thesis
/ | ROMDOC-THESIS-2010-031 |
Modelarea fenomenelor de transport în structuri semiconductoare utilizând metoda Monte Carlo
Amza, Claudiu (UPB)
2007-01-01
Abstract: As semiconductor feature sizes shrink into the nanometer scale regime, device behavior becomes increasingly complicated as new physical phenomena at short dimensions occur, and limitations in material properties are reached. Actual research efforts to improve the physical basis of device simulation programs have the following approaches: • extensions to present models, by adding additional equations governing carrier momentum and energy. • solutions based upon the Boltzmann Transport Equation, incorporating descriptions of semiconductor properties such as band structure and scattering rates. • a total quantum-mechanical approach. From this perspective the present thesis falls in the second approach. The thesis presents: • Modeling and simulation of the carrier transport in semiconductors • Scattering phenomena analysis and compute the scattering rates. • Implementation of a numerical simulator based on the Monte Carlo method which can be used on a wide range of semiconductor materials in order to determine the transport parameters.
Keyword(s): Semiconductoare Fenomene de transport -- Teză de doctorat ; Metoda Monte Carlo (Statistică matematică) -- Simulare cu modele matematice -- Teză de doctorat ; Fizica materialelor Semiconductoare -- Teză de doctorat
Note: Profirescu, Marcel D.
OPAC: See record in BC-UPB Web OPAC
Full Text: see files
Record created 2010-12-07, last modified 2011-11-11
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